?2011 fairchild semiconductor corporation 1 www.fairchildsemi.com FGA180N33ATD rev. c0 FGA180N33ATD 330 v pdp trench igbt april 2013 absolute maximum ratings notes: 1: repetitive test, pulse width = 100usec, duty = 0 .1 * i c_ pulse limited by max tj thermal characteristics symbol description ratings unit v ces collector to emitter voltage 330 v v ges gate to emitter voltage 30 v i c collector current @ t c = 25 o c 180 a i cm (1) pulsed collector current @ t c = 25 o c 450 a p d maximum power dissipation @ t c = 25 o c 390 w maximum power dissipation @ t c = 100 o c 156 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c t l maximum lead temp. for soldering purposes, 1/8 from case for 5 seconds 300 o c symbol parameter typ. max. unit r jc (igbt) thermal resistance, junction to case - 0.32 o c / w r jc (diode) thermal resistance, junction to case - 0.82 o c / w r ja thermal resistance, junction to ambient - 40 o c / w g e c g s d to-3p FGA180N33ATD 330 v pdp trench igbt features ? high current capability ? low saturation voltage: v ce(sat) = 1.68 v @ i c = 180 a ? high input impedance ? rohs complaint applications ? pdp tv general description using novel trench igbt technology, fairchild ? s new series of trench igbts offer the optimum performance for pdp tv appli- cations where low conduction and switching losses a re essen- tial.
FGA180N33ATD 330 v pdp trench igbt ?2011 fairchild semiconductor corporation 2 www.fairchildsemi.com FGA180N33ATD rev. c0 package marking and ordering information electrical characteristics of the igbt t c = 25c unless otherwise noted device marking device package packaging type qty per tube max qty per box FGA180N33ATD FGA180N33ATDtu to-3p tube 30ea - symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 400 a 330 - - v i ces collector cut-off current v ce = v ces , v ge = 0v - - 400 a i ges g-e leakage current v ge = v ges , v ce = 0v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 250ua, v ce = v ge 2.5 4.0 5.5 v v ce(sat) collector to emitter saturation voltage i c = 40a , v ge = 15v - 1.1 1.4 v i c = 180a , v ge = 15v, - 1.68 - v i c = 180a , v ge = 15v t c = 125 o c - 1.89 - v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 3880 - pf c oes output capacitance - 305 - pf c res reverse transfer capacitance - 180 - pf switching characteristics t d(on) turn-on delay time v cc = 200v, i c = 40a, r g = 5 , v ge = 15v, resistive load, t c = 25 o c - 27 - ns t r rise time - 80 - ns t d(off) turn-off delay time - 108 - ns t f fall time - 180 240 ns t d(on) turn-on delay time v cc = 200v, i c = 40a, r g = 5 , v ge = 15v, resistive load, t c = 125 o c - 26 - ns t r rise time - 75 - ns t d(off) turn-off delay time - 112 - ns t f fall time - 250 300 ns q g total gate charge v ce = 200v, i c = 40a, v ge = 15v - 169 - nc q ge gate to emitter charge - 22 - nc q gc gate to collector charge - 69 - nc
FGA180N33ATD 330 v pdp trench igbt ?2011 fairchild semiconductor corporation 3 www.fairchildsemi.com FGA180N33ATD rev. c0 electrical characteristics of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max unit v fm diode forward voltage i f = 20a t c = 25 o c - 1.2 1.6 v t c = 125 o c - 1.04 - t rr diode reverse recovery time i es =20a, di/dt = 200a/ s t c = 25 o c - 27 - ns t c = 125 o c - 39 - i rr diode peak reverse recovery cyrrent t c = 25 o c - 3.5 - a t c = 125 o c - 6.0 - q rr diode reverse recovery charge t c = 25 o c - 48 - nc t c = 125 o c - 117 -
FGA180N33ATD 330 v pdp trench igbt ?2011 fairchild semiconductor corporation 4 www.fairchildsemi.com FGA180N33ATD rev. c0 typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current lev el 0 2 4 6 0 50 100 150 200 20v 15v 7v 10v 12v t c = 25 o c 9v 8v v ge = 6v collector current, i c [a] collector-emitter voltage, v ce [v] 0 2 4 6 0 50 100 150 200 9v 8v 7v 10v 20v t c = 125 o c 15v 12v v ge = 6v collector current, i c [a] collector-emitter voltage, v ce [v] 0 1 2 3 0 50 100 150 200 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 2 4 6 8 10 0 50 100 150 200 common emitter v ce = 20v t c = 25 o c t c = 125 o c collector current, i c [a] gate-emitter voltage,v ge [v] 25 50 75 100 125 150 0.6 0.9 1.2 1.5 1.8 2.1 180 a 90 a 40a i c = 20a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c ] 0 4 8 12 16 20 0 4 8 12 16 20 180a i c = 20a 40a 90a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
FGA180N33ATD 330 v pdp trench igbt ?2011 fairchild semiconductor corporation 5 www.fairchildsemi.com FGA180N33ATD rev. c0 typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. capacitance chara cteristics figure 9. gate charge characteristics figure 10. soa characteristics figure 11. turn-on characteristics vs. figure 12. turn-off characteristics vs. 1 10 0 2000 4000 6000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 0 4 8 12 16 20 0 4 8 12 16 20 180a i c = 20a 40a 90a common emitter t c = 125 o c collector-emitter voltage, v ce [ v ] gate-emitter voltage, v ge [v] 0 30 60 90 120 150 180 0 3 6 9 12 15 common emitter t c = 25 o c 200v v cc = 100v gate-emitter voltage, v ge [v] gate charge, q g [nc] 1 10 100 1000 0.1 1 10 100 1000 dc operation i c max (continuous) i c max (pulse) 1ms 10ms *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v] 0 20 40 60 80 100 100 1000 5000 70 common emitter v cc = 200v, v ge = 15v i c = 40a t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] 0 20 40 60 80 100 10 100 common emitter v cc = 200v, v ge = 15v i c = 40a t c = 25 o c t c = 125 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ] 500 gate resistance gate resistance
FGA180N33ATD 330 v pdp trench igbt ?2011 fairchild semiconductor corporation 6 www.fairchildsemi.com FGA180N33ATD rev. c0 typical performance characteristics figure 13. turn-on characteristics vs. figure 14. turn-off characteristics v s. collector current collector current figure 15. turn off switching soa characteristics figure 16. forward characteristics 10 30 60 90 120 150 180 1 10 100 1000 common emitter v ge = 15v, r g = 15 ? t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] collector current, i c [a] 10 30 60 90 120 150 180 100 1000 common emitter v ge = 15v, r g = 15 ? t c = 25 o c t c = 125 o c t r t d(on) switching time [ns] collector current, i c [a] 2000 1 10 100 400 1 10 100 500 safe operating area v ge = 15v, t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 0.0 0.5 1.0 1.5 2.0 2.5 1 10 100 t j = 25 o c t c = 25 o c t c = 125 o c t j = 125 o c forward voltage, v f [v] forward current, i f [a]
FGA180N33ATD 330 v pdp trench igbt ?2011 fairchild semiconductor corporation 7 www.fairchildsemi.com FGA180N33ATD rev. c0 typical performance characteristics figure 19. reverse recovery current figure 20. stored charge figure 21.reverse recovery time figure 22.transient thermal impedance of igbt 5 10 15 20 25 30 35 40 1 2 3 4 200a/ ? s di/dt = 100a/ ? s reverse recovery currnet, i rr [a] forward current, i f [a] 5 10 15 20 25 30 35 40 10 20 30 40 50 60 200a/ ? s di/dt = 100a/ ? s stored recovery charge, q rr [nc] forward current, i f [a] 5 10 15 20 25 30 35 40 10 20 30 40 200a/ ? s di/dt = 100a/ ? s reverse recovery time, t rr [ns] forward current, i f [a] 1e-5 1e-4 1e-3 0.01 0.1 1 1e-3 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
FGA180N33ATD 330 v pdp trench igbt ?2011 fairchild semiconductor corporation 8 www.fairchildsemi.com FGA180N33ATD rev. c0 mechanical dimensions to-3pn dimensions in millimeters
FGA180N33ATD 330 v pdp trench igbt ?2011 fairchild semiconductor corporation 9 www.fairchildsemi.com FGA180N33ATD rev. c0 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild se miconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trade marks. *trademarks of system general corporation, used un der license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products here in to improve reliability, function, or design. fairchild does no t assume any liability arising out of the applicati on or use of any product or circuit described herein; neither does i t convey any license under its patent rights, nor t he rights of others. these specifications do not expand the terms of fai rchilds worldwide terms and conditions, specifical ly the warranty therein, which covers these products. life support policy fairchilds products are not authorized for use as critical components in life support devices or syst ems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or s ystems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the u ser. 2. a critical component in any component of a life s upport, device, or system whose failure to perform can be reasonably e xpected to cause the failure of the life support device or system, o r to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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